We announce the mass production of second generation silicon carbide MOSFET devices. Compared with the same cost silicon device-based systems, Maximum new silicon carbide MOSFET devices can achieve higher system efficiency and smaller system size, which can bring lower system cost to OEM manufacturers.
As a market leader in silicon carbide (SiC) power devices, we have introduced the second generation silicon carbide MOSFET devices. Compared with the system based on silicon devices at the same cost, the new silicon carbide MOSFET device can achieve higher system efficiency and smaller system size. The new 1200V MOSFET device can provide the industry's leading power density and conversion efficiency, while the cost per ampere is only 50% of the previous generation's products. Higher cost-effectiveness makes the new silicon carbide MOSFET devices bring lower system costs to OEM manufacturers, and because the system based on silicon carbide is smaller in size and lighter in weight, it can improve efficiency and reduce installation costs, thus saving additional costs for end users.
We have evaluated the second generation silicon carbide MOSFET devices in our new advanced solar circuit. Our products have top-notch efficiency, enabling the system to operate at higher switching frequencies, thus achieving smaller passive devices, especially smaller reactors. This will fundamentally improve the performance-to-price ratio of solar inverters, thereby achieving smaller, lighter and more efficient systems.
The excellent performance of the new silicon carbide MOSFET device can reduce the rated current requirement of 50% - 70% for power devices in some high power applications. After proper optimization, customers can obtain the system performance advantages brought by silicon carbide devices at a cost comparable to or even lower than that of silicon devices. For solar inverters and uninterruptible power supply (UPS) systems, performance improvements are accompanied by a reduction in size and weight. In motor drive applications, the power density can be more than twice as high as the efficiency, and the output torque can be as high as twice as that of silicon devices. The product coverage has been extended to 25 m_chips, and the target location is more than 30 KW power module market. The target location of 80 m_devices is to upgrade the first generation of MOSFET devices to provide higher performance at lower cost.
Based on the new MOSFET platform, we have achieved success in many market segments. Because of the rapid acceptance of the second generation silicon carbide MOSFET devices in the market, we can give some products to customers in advance. At the same time, we are accelerating production to meet customer needs.
A 25 m_bare chip can provide 50 A units for high power modules. The 80 m_MOSFET device is packaged in TO-247, which provides higher performance and lower cost than Maximum's first-generation MOSFET CMF20120D product.